H10D 62/158
Dispositions
Official title: {Dispositions}
H10D62/158 (Dispositions) appears on 511 US grants and 614 published applications in this corpus.
Search patents in H10D- Granted patents
- 511
- Published applications
- 614
- Assignees
- 151
- Inventors
- 892
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 1 |
| 2003 | 2 | 2 |
| 2004 | 0 | 2 |
| 2005 | 3 | 3 |
| 2006 | 1 | 4 |
| 2007 | 2 | 6 |
| 2008 | 4 | 1 |
| 2009 | 4 | 4 |
| 2010 | 2 | 6 |
| 2011 | 2 | 10 |
| 2012 | 10 | 9 |
| 2013 | 9 | 25 |
| 2014 | 19 | 24 |
| 2015 | 26 | 36 |
| 2016 | 59 | 79 |
| 2017 | 62 | 63 |
| 2018 | 45 | 53 |
| 2019 | 58 | 85 |
| 2020 | 65 | 58 |
| 2021 | 47 | 26 |
| 2022 | 24 | 20 |
| 2023 | 19 | 22 |
| 2024 | 17 | 33 |
| 2025 | 17 | 31 |
| 2026 | 11 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Wide bandgap transistor layout with unequal gate electrode finger widths25 Aug 2026US 12,720,842 B2Skyworks Solutions, Inc.
- Superjunction silicon carbide semiconductor device having trench gate structures formed on stacked layers of parallel pn junctions extending in different directions and method thereof4 Aug 2026US 12,701,753 B2Fuji Electric Co., Ltd.
- Frontside ILD optimization for backside power distribution network7 Jul 2026US 12,677,453 B2International Business Machines Corporation
- Methods of improving PMOS transistor performance23 Jun 2026US 12,666,695 B2APPLIED Materials.Inc.
- High voltage field effect transistors with superjunctions and method of making the same16 Jun 2026US 12,660,256 B2SanDisk Technologies LLC
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
- Silicon carbide semiconductor device27 Aug 2026US 2026/0255638 A1Sumitomo Electric Industries, Ltd.
- Laterally diffused field effect transistor with channel in fin region and drain extension region in planar region28 May 2026US 2026/0150331 A1GLOBALFOUNDRIES U. S. Inc.
- Semiconductor die with a vertical transistor device26 Mar 2026US 2026/0090361 A1Infineon Technologies Austria AG
- Transistor structure and manufacturing method thereof19 Mar 2026US 2026/0082620 A1Silergy Semiconductor Technology (Hangzhou) LTD
Most cited
By later US patents
- Nanotube semiconductor devices60US 8,299,494 B2Alpha and Omega Semiconductor Incorporated · 2012
- IE type trench gate IGBT39US 9,041,050 B2Renesas Electronics Corporation · 2015
- Chip scale power LDMOS device26US 7,560,808 B2Texas Instruments Incorporated · 2009
- Gate-all-around fin device25US 9,281,379 B1International Business Machines Corporation · 2016
- Semiconductor device and method of manufacturing the same23US 6,399,468 B2Sanyo Electric Co., Ltd. · 2002