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US 12,677,453 B2Granted
Frontside ILD optimization for backside power distribution network
AssigneeInternational Business Machines Corporation
InventorsHaojun Zhang, Ruilong Xie, Oleg Gluschenkov, Nicolas Jean Loubet
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Abstract
A semiconductor structure containing optimized frontside interlayer dielectrics (ILDs) for a direct backside contact based backside power distribution network is provided. Notably, the frontside ILD materials that are present in the semiconductor structure are optimized such that a frontside ILD layer that is present on a critical circuit path has a thermal conductivity that is less than a thermal conductivity of a frontside ILD layer that is present on a non-circuit path.
Claims20
A semiconductor structure comprising:
- a first region comprising a first pair of complementary transistors;
- a second region adjacent to the first region, wherein the second region comprises a second pair of complementary transistors;
- a first frontside interlayer dielectric (ILD) layer having a first thermal conductivity present in the second region;
- and
- a second frontside ILD layer having a second thermal conductivity present in the first region and in the second region, wherein the second thermal conductivity is less than the first thermal conductivity.
2 more elements
Dependencies are inferred from the claim text.