Laterally diffused field effect transistor with channel in fin region and drain extension region in planar region
AssigneeGlobalFoundries U.S. Inc.
InventorsRahul Ghattamaneni, Haiting Wang
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Abstract
A laterally diffused field effect transistor (LDFET) and a related method are disclosed. The LDFET includes a substrate having a fin region and a planar region adjacent to the fin region. The LDFET also includes a source region in the fin region, a drain region in the planar region, a channel gate over the fin region and the planar region, and a drain extension region in the planar region between the source region and the drain region. The use of a substrate with a fin region for the source region and the channel of the channel gate and a planar region for the drain region and the drain extension region provides many of the benefits of both types of substrates for the LDFET.
Claims20
A laterally diffused field effect transistor (LDFET), comprising:
- a substrate having a fin region and a planar region adjacent to the fin region;
- a source region in the fin region;
- a drain region in the planar region;
- a channel gate over the fin region and the planar region;
- and
- a drain extension region in the planar region between the source region and the drain region.
A laterally diffused field effect transistor (LDFET), comprising:
- a substrate having a fin region and a planar region adjacent to the fin region;
- a source region in the fin region;
- a drain region in the planar region;
- a channel gate over the fin region and the planar region;
- a channel in the fin region under the channel gate;
- a drain extension region in the planar region between the channel and the drain region;
- and
- a first gate dielectric between the channel gate and the fin region and a second gate dielectric between the channel gate and the planar region.
A method, comprising:
- forming a substrate having a fin region and a planar region adjacent the fin region;
- forming a source region in the fin region;
- forming a drain region in the planar region;
- and
- forming a channel gate over the fin region and the planar region, creating a channel in the fin region under the channel gate and a drain extension region in the planar region between the channel and the drain region,
- wherein forming the channel gate includes forming a first gate dielectric between a body of the channel gate and the fin region and forming a second gate dielectric between the body of the channel gate and the planar region.
Dependencies are inferred from the claim text.