H10D 62/13
Semiconductor regions connected to electrodes carrying current to be rectified, amplified or
Official title: Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
H10D62/13 (Semiconductor regions connected to electrodes carrying current to be rectified, amplified or) appears on 18,064 US grants and 21,006 published applications in this corpus.
Search patents in H10D- Granted patents
- 18,064
- Published applications
- 21,006
- Assignees
- 1,499
- Inventors
- 16,290
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 22 | 0 |
| 1977 | 39 | 0 |
| 1978 | 28 | 0 |
| 1979 | 18 | 0 |
| 1980 | 34 | 0 |
| 1981 | 33 | 0 |
| 1982 | 29 | 0 |
| 1983 | 35 | 0 |
| 1984 | 20 | 0 |
| 1985 | 28 | 0 |
| 1986 | 29 | 0 |
| 1987 | 42 | 0 |
| 1988 | 45 | 0 |
| 1989 | 68 | 0 |
| 1990 | 77 | 0 |
| 1991 | 80 | 0 |
| 1992 | 74 | 0 |
| 1993 | 58 | 0 |
| 1994 | 84 | 0 |
| 1995 | 86 | 0 |
| 1996 | 97 | 0 |
| 1997 | 92 | 0 |
| 1998 | 129 | 0 |
| 1999 | 126 | 0 |
| 2000 | 116 | 0 |
| 2001 | 108 | 58 |
| 2002 | 118 | 159 |
| 2003 | 138 | 159 |
| 2004 | 189 | 202 |
| 2005 | 177 | 273 |
| 2006 | 160 | 263 |
| 2007 | 183 | 293 |
| 2008 | 164 | 309 |
| 2009 | 195 | 317 |
| 2010 | 297 | 393 |
| 2011 | 327 | 396 |
| 2012 | 338 | 448 |
| 2013 | 435 | 549 |
| 2014 | 592 | 717 |
| 2015 | 739 | 976 |
| 2016 | 1025 | 1224 |
| 2017 | 1233 | 1266 |
| 2018 | 1255 | 1239 |
| 2019 | 1335 | 1524 |
| 2020 | 1440 | 1618 |
| 2021 | 1202 | 1307 |
| 2022 | 1101 | 1357 |
| 2023 | 988 | 1537 |
| 2024 | 990 | 1626 |
| 2025 | 1150 | 1772 |
| 2026 | 696 | 1024 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device6 Oct 2026US 12,757,434 B2Samsung Electronics Co., Ltd.
- Backside power distribution network and signal line integration6 Oct 2026US 12,757,444 B2International Business Machines Corporation
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor having segmented channel region8 Oct 2026US 2026/0313947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Vertical gate-all-around device8 Oct 2026US 2026/0313962 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016