H10D 62/137
Collector regions of bjts
Official title: {Collector regions of BJTs}
H10D62/137 (Collector regions of bjts) appears on 1,520 US grants and 1,482 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,520
- Published applications
- 1,482
- Assignees
- 340
- Inventors
- 1,961
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 8 | 0 |
| 1978 | 7 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 7 | 0 |
| 1982 | 4 | 0 |
| 1983 | 6 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 13 | 0 |
| 1990 | 12 | 0 |
| 1991 | 14 | 0 |
| 1992 | 9 | 0 |
| 1993 | 11 | 0 |
| 1994 | 18 | 0 |
| 1995 | 15 | 0 |
| 1996 | 9 | 0 |
| 1997 | 8 | 0 |
| 1998 | 5 | 0 |
| 1999 | 9 | 0 |
| 2000 | 7 | 0 |
| 2001 | 13 | 9 |
| 2002 | 18 | 26 |
| 2003 | 22 | 22 |
| 2004 | 25 | 33 |
| 2005 | 25 | 33 |
| 2006 | 32 | 38 |
| 2007 | 22 | 35 |
| 2008 | 25 | 42 |
| 2009 | 31 | 15 |
| 2010 | 34 | 34 |
| 2011 | 27 | 33 |
| 2012 | 23 | 39 |
| 2013 | 38 | 49 |
| 2014 | 52 | 59 |
| 2015 | 79 | 112 |
| 2016 | 104 | 147 |
| 2017 | 135 | 91 |
| 2018 | 94 | 88 |
| 2019 | 103 | 121 |
| 2020 | 96 | 89 |
| 2021 | 82 | 71 |
| 2022 | 67 | 58 |
| 2023 | 63 | 87 |
| 2024 | 69 | 64 |
| 2025 | 34 | 48 |
| 2026 | 23 | 39 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Heterojunction bipolar transistor and base-collector grade layer29 Sep 2026US 12,751,024 B2National Taiwan University
- High voltage breakdown resistant bipolar transistor29 Sep 2026US 12,751,054 B2Newport Fab, LLC
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device21 Jul 2026US 12,690,208 B2Mitsubishi Electric Corporation
- Structure and related method for source/drain terminal within subcollector14 Jul 2026US 12,684,838 B2GLOBALFOUNDRIES U. S. Inc.
- Bipolar junction transistors with nanosheet structures and methods for manufacturing the same1 Oct 2026US 2026/0304808 A1Tokyo Electron Limited
- Igbt device and cell structure thereof, and manufacturing method for cell structure1 Oct 2026US 2026/0304869 A1Gree Electric Appliances, Inc. of Zhuhai
- Lateral heterojunction bipolar transistor10 Sep 2026US 2026/0271357 A1GLOBALFOUNDRIES U. S. Inc.
- Bipolar Junction Transistors Including Embedded Base Superlattice And Related Methods13 Aug 2026US 2026/0239639 A1Atomera Incorporated
- Reverse blocking insulated-gate bipolar transistor13 Aug 2026US 2026/0239640 A1Littelfuse, Inc.
Most cited
By later US patents
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Method of maintaining the state of semiconductor memory having electrically floating body transistor208US 8,208,302 B2Zeno Semiconductor, Inc. · 2012