H10D 62/138
Pedestal collectors
Official title: {Pedestal collectors}
H10D62/138 (Pedestal collectors) appears on 130 US grants and 118 published applications in this corpus.
Search patents in H10D- Granted patents
- 130
- Published applications
- 118
- Assignees
- 36
- Inventors
- 195
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 1 |
| 2002 | 1 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 0 | 2 |
| 2010 | 3 | 3 |
| 2011 | 2 | 0 |
| 2012 | 0 | 0 |
| 2013 | 4 | 6 |
| 2014 | 1 | 3 |
| 2015 | 15 | 23 |
| 2016 | 14 | 12 |
| 2017 | 14 | 8 |
| 2018 | 8 | 5 |
| 2019 | 4 | 9 |
| 2020 | 6 | 7 |
| 2021 | 8 | 9 |
| 2022 | 3 | 5 |
| 2023 | 9 | 1 |
| 2024 | 4 | 4 |
| 2025 | 2 | 12 |
| 2026 | 2 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High voltage breakdown resistant bipolar transistor29 Sep 2026US 12,751,054 B2Newport Fab, LLC
- Semiconductor device having an extrinsic base region with a monocrystalline region and method therefor27 Jan 2026US 12,538,507 B2NXP B. V.
- Method for forming a transistor with a conductivity doped base structure16 Dec 2025US 12,501,634 B2NXP USA, Inc.
- Epitaxial structure and transistor including the same14 Jan 2025US 12,199,145 B2Xiamen Sanan Integrated Circuit Co., Ltd.
- Heterojunction bipolar transistor with buried trap rich isolation region17 Dec 2024US 12,170,313 B2GLOBALFOUNDRIES U. S. Inc.
- Structure with spacer on intrinsic base pedestal and related methods6 Aug 2026US 2026/0231488 A1GLOBALFOUNDRIES U. S. Inc.
- Heterojunction bipolar transistor device2 Jul 2026US 2026/0190363 A1Quanzhou Sanan Integrated Circuit Co., Ltd.
- Method for Fabricating a High Voltage Breakdown Resistant Bipolar Transistor23 Apr 2026US 2026/0113995 A1Newport Fab, LLC dba Tower Semiconductor Newport Beach
- Bipolar junction transistor with finfet structure5 Mar 2026US 2026/0068200 A1
- Vertical heterojunction bipolar transistor22 Jan 2026US 2026/0026024 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Power amplifier modules including related systems, devices, and methods66US 9,041,472 B2Skyworks Solutions, Inc. · 2015
- Bipolar transistor53US 4,996,581 AKabushiki Kaisha Toshiba · 1991
- Semiconductor device50US 5,321,301 ANEC Corporation · 1994
- Power amplifier modules including wire bond pad and related systems, devices, and methods33US 9,660,584 B2Skyworks Solutions, Inc. · 2017