Power amplifier modules including related systems, devices, and methods

A power amplifier module comprising:

• a power amplifier configured to receive an RF input signal and to generate an amplified RF signal;
• an RF transmission line configured to propagate the amplified RF signal, the RF transmission line including a gold layer configured to receive the amplified RF signal, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, and a conductive layer proximate the diffusion barrier layer, the diffusion barrier layer including nickel and having a thickness of less than about the skin depth of nickel at 0.45 GHz;
• a first termination circuit configured to match an impedance of a fundamental frequency of the amplified RF signal, the first termination circuit including at least a portion of the RF transmission line;
• and
• a second termination circuit separate from the first termination circuit, the second termination circuit configured to terminate at a phase corresponding to a harmonic frequency of the amplified RF signal, the power amplifier electrically coupled to first termination circuit by way of at least one wirebond and the power amplifier electrically coupled to the second termination circuit by way of a different number of wirebonds than the first termination circuit.

A power amplifier module comprising:

• a substrate configured to receive a plurality of components, the substrate including an RF transmission line thereon, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than the skin depth of nickel at a frequency of about 0.45 GHz;
• a first die coupled to the substrate, the first die including a power amplifier having an output electrically connected to the gold layer of the RF transmission line, the first die further including a passive component having a property that depends on one or more conditions of the first die;
• and
• a second die coupled to the substrate, the second die including a bias generating circuit configured to generate a bias signal based at least in part on an indicator of the property of the passive component of the first die.

A power amplifier module comprising:

• a substrate configured to receive a plurality of components, the substrate having a finish plating that includes a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.45 GHz;
• a power amplifier die including a power amplifier and an least one tantalum nitride terminated through wafer via, the power amplifier configured to receive an RF input signal and to generate an amplified RF signal;
• and
• a termination circuit configured to terminate at a phase of a harmonic of the amplified RF signal, the termination circuit including at least one wirebond configured to electrically couple an output of the power amplifier to the gold layer of the finish plating.