US 2026/0068200 A1 · BIPOLAR JUNCTION TRANSISTOR WITH FINFET STRUCTURE

Abstract

In a method of forming a bipolar junction transistor (BJT) structure, an emitter/base/collector structure is formed, comprising mutually parallel fins with an insulator material disposed between the fins. Each fin of the emitter/base/collector structure has first and second peripheral regions doped with a first doping type on opposite sides of a central region doped with a second doping type opposite the first doping type. The first peripheral regions of the fins are an emitter of the BJT structure, the central regions of the fins are a base of the BJT structure, and the second peripheral regions of the fins are a collector of the BJT structure. Continuous emitter, base, and collector contact strips are epitaxially deposited on the emitter, base, and collector of the BJT structure, respectively.

Claims20

Dependent claims

A method of forming a bipolar junction transistor (BJT) structure, the method comprising:

providing an emitter/base/collector structure comprising mutually parallel fins with an insulator material disposed between the fins, each fin of the emitter/base/collector structure having first and second peripheral regions doped with a first doping type on opposite sides of a central region doped with a second doping type opposite the first doping type, wherein the first peripheral regions of the fins are an emitter of the BJT structure, the central regions of the fins are a base of the BJT structure, and the second peripheral regions of the fins are a collector of the BJT structure;
and
epitaxially depositing an emitter contact on the emitter of the BJT structure, a base contact on the base of the BJT structure, and a collector contact on the collector of the BJT structure.

A bipolar junction transistor (BJT) comprising:

mutually parallel fins with an insulator material disposed between the fins, the mutually parallel fins having regions of alternating first and second doping types along the fins, the regions including at least one emitter region of the first doping type, at least one base region of the second doping type, and at least one collector region of the first doping type;
at least one continuous emitter contact strip oriented perpendicular to the mutually parallel fins and disposed over a corresponding emitter region of the first doping type;
at least one continuous base contact strip oriented perpendicular to the mutually parallel fins and disposed over a corresponding base region of the second doping type;
and
at least one continuous collector contact strip oriented perpendicular to the mutually parallel fins and disposed over a corresponding collector region of the first doping type.

2 more elements

Dependencies are inferred from the claim text.

Bipolar junction transistor with finfet structure

Life of this patent

Bipolar junction transistor with finfet structure

Life of this patent

Abstract

Claims20