High voltage breakdown resistant bipolar transistor
AssigneeNewport Fab, LLC
InventorsRam Asra, Edward Preisler
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Abstract
A bipolar transistor includes a sub-collector doped with a first dopant type and situated in a semiconductor substrate, a device layer doped with the first dopant type situated over the sub-collector, and a shallow trench isolation (STI) situated in the device layer and bordering a collector of the bipolar transistor. The bipolar transistor further includes a Reduced Surface Layer (RESURF) region doped with a second dopant type opposite the first dopant type situated between the collector and the STI, wherein the RESURF region protects against breakdown of the bipolar transistor.
Claims19
A bipolar transistor comprising:
- a sub-collector situated in a semiconductor substrate, said sub-collector being doped with a first dopant type;
- a device layer doped with said first dopant type situated over said sub-collector;
- a shallow trench isolation (STI) situated in said device layer, said STI bordering a collector of said bipolar transistor;
- a Reduced Surface Layer (RESURF) region doped with a second dopant type opposite said first dopant type, said RESURF region extending under said STI and being situated between said collector and said STI, said RESURF region being in direct contact with said collector, said RESURF region extending continuously from said collector to a bottom of said STI;
- wherein said RESURF region protects against breakdown of said bipolar transistor.
A bipolar transistor comprising:
- a sub-collector situated in a semiconductor substrate, said sub-collector being doped with a first dopant type;
- a device layer doped with said first dopant type situated over said sub-collector;
- a shallow trench isolation (STI) situated in said device layer;
- a Reduced Surface Layer (RESURF) region doped with a second dopant type opposite said first dopant type, said RESURF region extending under said STI and being situated between a collector of said bipolar transistor and said STI, said RESURF region being in direct contact with said collector.
Dependencies are inferred from the claim text.