Method for Fabricating a High Voltage Breakdown Resistant Bipolar Transistor
AssigneeNewport Fab, LLC dba Tower Semiconductor Newport Beach
InventorsRam Asra, Edward Preisler
Life of this patent
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Abstract
A bipolar transistor includes a sub-collector doped with a first dopant type and situated in a semiconductor substrate, a device layer doped with the first dopant type situated over the sub-collector, and a shallow trench isolation (STI) situated in the device layer and bordering a collector of the bipolar transistor. The bipolar transistor further includes a Reduced Surface Layer (RESURF) region doped with a second dopant type opposite the first dopant type situated between the collector and the STI, wherein the RESURF region protects against breakdown of the bipolar transistor.
Claims21
A method for fabricating a bipolar transistor, the method comprising:
- forming a sub-collector in a semiconductor substrate, said sub-collector being doped with a first dopant type;
- forming a device layer doped with said first dopant type over said sub-collector;
- patterning a trench in said device layer, said trench bordering a collector of said bipolar transistor;
- implanting a dopant of a second dopant type opposite said first dopant type into said device layer through said trench;
- forming a shallow trench isolation (STI) in said trench;
- forming a Reduced Surface Layer (RESURF) region having said second dopant type between said collector and said STI;
- wherein said RESURF region protects against breakdown of said bipolar transistor.
12-20. (canceled)
A method for fabricating a bipolar transistor, the method comprising:
- forming a sub-collector in a semiconductor substrate, said sub-collector being doped with a first dopant type;
- forming a device layer doped with said first dopant type over said sub-collector;
- patterning a trench in said device layer;
- implanting a dopant of a second dopant type opposite said first dopant type into said device layer through said trench;
- forming a shallow trench isolation (STI);
- forming a Reduced Surface Layer (RESURF) region having said second dopant type adjacent said collector;
- wherein said RESURF region protects against breakdown of said bipolar transistor.
Dependencies are inferred from the claim text.