Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorTomohito Kudo
Life of this patent
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Abstract
A semiconductor substrate (1) includes a main region (2) and a sense region (3) having a smaller operation region area than that of the main region (2). An IGBT is formed in the main region (2). A MOSFET is formed as a sense device in the sense region (3) and has a gate electrode (15) connected to a gate electrode (15) of the IGBT. A front surface electrode (5) is formed on a front surface of the semiconductor substrate (1) in the main region (2). A rear surface electrode (20) is formed on a rear surface of the semiconductor substrate (1) in the main region (2) and the sense region (3). A current detection electrode (6) is formed on the front surface in the sense region (3) and separated from the front surface electrode (5).
Claims14
A semiconductor device comprising:
- a semiconductor substrate including a main region and a sense region having a smaller operation region area than that of the main region;
- an IGBT formed in the main region;
- a MOSFET formed as a sense device in the sense region and having a gate electrode connected to a gate electrode of the IGBT;
- a front surface electrode formed on a front surface of the semiconductor substrate in the main region;
- a rear surface electrode formed on a rear surface of the semiconductor substrate in the main region and the sense region such that the rear surface electrode electrically contacts a collector layer of the IGBT and a drain layer of the MOSFET;
- and
- a current detection electrode formed on the front surface in the sense region and separated from the front surface electrode, wherein
- a trench is positioned in the semiconductor substrate between the IGBT and the MOSFET, the trench being spaced from all source layers of the MOSFET and all emitter layers of the IGBT,
- the MOSFET and the IGBT each comprise a first layer of a same conductivity type as the collector layer, and the MOSFET and the IGBT each comprise a second layer of the same conductivity type as the collector layer, the second layer having a higher impurity concentration than that of the first layer, and
- the trench is spaced from the second layer of the MOSFET and the IGBT.
A semiconductor device comprising:
- a semiconductor substrate including a main region and a sense region having a smaller operation region area than that of the main region;
- a MOSFET formed in the main region;
- an IGBT formed as a sense device in the sense region and having a gate electrode connected to a gate electrode of the MOSFET;
- a front surface electrode formed on a front surface of the semiconductor substrate in the main region;
- a rear surface electrode formed on a rear surface of the semiconductor substrate in the main region and the sense region such that the rear surface electrode electrically contacts a drain layer of the MOSFET and a collector layer of the IGBT;
- and
- a current detection electrode formed on the front surface in the sense region and separated from the front surface electrode, wherein
- a trench is positioned in the semiconductor substrate between the IGBT and the MOSFET, the trench being spaced from all source layers of the MOSFET and all emitter layers of the IGBT,
- the MOSFET and the IGBT each comprise a first layer of a same conductivity type as the collector layer, and the MOSFET and the IGBT each comprise a second layer of the same conductivity type as the collector layer, the second layer having a higher impurity concentration than that of the first layer, and
- the trench is spaced from the second layer of the MOSFET and the IGBT.
Dependencies are inferred from the claim text.