Reverse blocking insulated-gate bipolar transistor
AssigneeLittelfuse, Inc.
InventorPeter Waind
Life of this patent
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Abstract
Methods for making reverse-blocking insulated gate bipolar transistors and associated structures. A first and a second silicon wafer substrates are provided and bonded. One or more separation diffusion regions are formed in the first silicon wafer substrate. One or more front side metal-oxide semiconductor (MOS) structures are formed on a top surface of the first silicon wafer substrate. The second silicon wafer substrate layer is removed. A contact diffusion layer is formed on a bottom surface of the first silicon wafer substrate. A backside metallization layer is formed on a bottom surface of the contact diffusion layer.
Claims20
A semiconductor device, comprising:
- a silicon wafer substrate having a diffusion region, the diffusion region is formed by diffusing one or more particles into the silicon wafer substrate;
- one or more separation diffusion regions formed in the silicon wafer substrate and merged with the diffusion region;
- one or more front side metal-oxide semiconductor (MOS) structures formed on a top surface of the silicon wafer substrate;
- a contact diffusion layer formed on a bottom surface of the silicon wafer substrate;
- and
- a backside metallization layer formed on a bottom surface of the contact diffusion layer.
A method for manufacturing a semiconductor device, comprising:
- diffusing one or more particles into a silicon wafer substrate to form a diffusion region;
- forming one or more separation diffusion regions in the silicon wafer substrate and merging the one or more separation diffusion regions with the diffusion region;
- forming one or more front side metal-oxide semiconductor (MOS) structures on a top surface of the silicon wafer substrate;
- forming a contact diffusion layer on a bottom surface of the silicon wafer substrate;
- and
- forming a backside metallization layer on a bottom surface of the contact diffusion layer.
Dependencies are inferred from the claim text.