H10D 62/133
Emitter regions of bjts
Official title: {Emitter regions of BJTs}
H10D62/133 (Emitter regions of bjts) appears on 1,413 US grants and 1,291 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,413
- Published applications
- 1,291
- Assignees
- 338
- Inventors
- 1,970
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 14 | 0 |
| 1978 | 6 | 0 |
| 1979 | 8 | 0 |
| 1980 | 8 | 0 |
| 1981 | 8 | 0 |
| 1982 | 9 | 0 |
| 1983 | 6 | 0 |
| 1984 | 5 | 0 |
| 1985 | 5 | 0 |
| 1986 | 10 | 0 |
| 1987 | 9 | 0 |
| 1988 | 8 | 0 |
| 1989 | 11 | 0 |
| 1990 | 11 | 0 |
| 1991 | 5 | 0 |
| 1992 | 12 | 0 |
| 1993 | 11 | 0 |
| 1994 | 13 | 0 |
| 1995 | 9 | 0 |
| 1996 | 16 | 0 |
| 1997 | 7 | 0 |
| 1998 | 13 | 0 |
| 1999 | 7 | 0 |
| 2000 | 13 | 0 |
| 2001 | 7 | 5 |
| 2002 | 18 | 21 |
| 2003 | 12 | 16 |
| 2004 | 32 | 30 |
| 2005 | 31 | 32 |
| 2006 | 22 | 18 |
| 2007 | 19 | 21 |
| 2008 | 10 | 15 |
| 2009 | 14 | 15 |
| 2010 | 18 | 12 |
| 2011 | 15 | 10 |
| 2012 | 13 | 20 |
| 2013 | 11 | 31 |
| 2014 | 24 | 36 |
| 2015 | 66 | 102 |
| 2016 | 94 | 129 |
| 2017 | 118 | 102 |
| 2018 | 108 | 96 |
| 2019 | 106 | 126 |
| 2020 | 104 | 94 |
| 2021 | 86 | 77 |
| 2022 | 63 | 57 |
| 2023 | 66 | 82 |
| 2024 | 58 | 58 |
| 2025 | 41 | 54 |
| 2026 | 29 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Heterojunction bipolar transistor and base-collector grade layer29 Sep 2026US 12,751,024 B2National Taiwan University
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bipolar transistor structures with cavity below extrinsic base and methods to form same15 Sep 2026US 12,740,113 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device11 Aug 2026US 12,707,687 B2Kabushiki Kaisha Toshiba
- Bipolar junction transistors with nanosheet structures and methods for manufacturing the same1 Oct 2026US 2026/0304808 A1Tokyo Electron Limited
- Iii-v heterojunction bipolar transistor and its manufacturing method1 Oct 2026US 2026/0304809 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Lateral heterojunction bipolar transistor10 Sep 2026US 2026/0271357 A1GLOBALFOUNDRIES U. S. Inc.
- Method of manufacturing an electronic device6 Aug 2026US 2026/0231450 A1STMicroelectronics International N. V.
- Lateral transistors6 Aug 2026US 2026/0231451 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Transverse ultra-thin insulated gate bipolar transistor having high current density189US 9,240,469 B2Southeast University · 2016
- Method of manufacturing semiconductor device124US 5,227,329 AHitachi, Ltd. · 1993
- Low emitter resistance contacts to GaAs high speed HBT80US 6,661,037 B2MicroLink Devices, Inc. · 2003
- AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor78US 6,917,061 B2MicroLink Devices, Inc. · 2005