H10D 62/134
Of lateral bjts
Official title: {of lateral BJTs}
H10D62/134 (Of lateral bjts) appears on 250 US grants and 264 published applications in this corpus.
Search patents in H10D- Granted patents
- 250
- Published applications
- 264
- Assignees
- 80
- Inventors
- 398
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 3 |
| 2005 | 3 | 3 |
| 2006 | 0 | 1 |
| 2007 | 2 | 1 |
| 2008 | 0 | 2 |
| 2009 | 1 | 0 |
| 2010 | 2 | 2 |
| 2011 | 0 | 4 |
| 2012 | 4 | 4 |
| 2013 | 3 | 7 |
| 2014 | 6 | 8 |
| 2015 | 12 | 23 |
| 2016 | 25 | 24 |
| 2017 | 26 | 24 |
| 2018 | 26 | 16 |
| 2019 | 18 | 25 |
| 2020 | 22 | 9 |
| 2021 | 10 | 8 |
| 2022 | 8 | 11 |
| 2023 | 25 | 44 |
| 2024 | 24 | 20 |
| 2025 | 11 | 13 |
| 2026 | 7 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Bipolar transistor structures with cavity below extrinsic base and methods to form same15 Sep 2026US 12,740,113 B2GLOBALFOUNDRIES U. S. Inc.
- Field-effect transistor structure including passive device or bipolar junction transistor with back side power distribution network (BSPDN)26 May 2026US 12,641,865 B2Samsung Electronics Co., Ltd.
- Semiconductor device5 May 2026US 12,622,006 B2Samsung Electronics Co., Ltd.
- High frequency heterojunction bipolar transistor devices31 Mar 2026US 12,593,461 B2Analog Devices, Inc.
- Bipolar junction transistors with nanosheet structures and methods for manufacturing the same1 Oct 2026US 2026/0304808 A1Tokyo Electron Limited
- Lateral heterojunction bipolar transistor10 Sep 2026US 2026/0271357 A1GLOBALFOUNDRIES U. S. Inc.
- Lateral transistors6 Aug 2026US 2026/0231451 A1GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device11 Jun 2026US 2026/0164687 A1Samsung Electronics Co., Ltd.
- Semiconductor device28 May 2026US 2026/0150660 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Transverse ultra-thin insulated gate bipolar transistor having high current density189US 9,240,469 B2Southeast University · 2016
- SOI SiGe-base lateral bipolar junction transistor53US 8,288,758 B2International Business Machines Corporation · 2012
- SOI SiGe-base lateral bipolar junction transistor39US 8,420,493 B2International Business Machines Corporation · 2013
- Horizontal polysilicon-germanium heterojunction bipolar transistor26US 8,441,084 B2International Business Machines Corporation · 2013
- Lateral bipolar junction transistor with controlled junction21US 10,825,921 B2International Business Machines Corporation · 2020