Lateral bipolar junction transistor with controlled junction

A lateral bipolar junction transistor (LBJT) device comprising:

• a crystalline oxide layer that is selected from the group consisting of cerium oxide (CeO2), lanthanum oxide (La2O3), yttrium oxide (Y2O3), gadolinium oxide (Gd2O3), terbium oxide (Tb2O3) and combinations thereof;
• a base region comprised of a germanium containing material in bonded engagement to the crystalline oxide layer;
• an extrinsic base region formed on the germanium containing material;
• and
• an emitter region and collector region present on opposing sides of the base region, wherein the emitter region and the collector region are in direct contact with the crystalline oxide layer, the emitter and collector region having a crystal lattice substantially matched to the crystalline oxide layer.