H10D 62/136
Of heterojunction bjts
Official title: {of heterojunction BJTs (vertical heterojunction BJTs having one or more non-monocrystalline Group IV elements H10D10/861)}
H10D62/136 (Of heterojunction bjts) appears on 391 US grants and 396 published applications in this corpus.
Search patents in H10D- Granted patents
- 391
- Published applications
- 396
- Assignees
- 124
- Inventors
- 567
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 2 | 0 |
| 2000 | 4 | 0 |
| 2001 | 1 | 2 |
| 2002 | 7 | 6 |
| 2003 | 7 | 7 |
| 2004 | 14 | 9 |
| 2005 | 7 | 13 |
| 2006 | 11 | 7 |
| 2007 | 4 | 8 |
| 2008 | 4 | 5 |
| 2009 | 4 | 6 |
| 2010 | 6 | 3 |
| 2011 | 2 | 3 |
| 2012 | 6 | 7 |
| 2013 | 3 | 12 |
| 2014 | 9 | 14 |
| 2015 | 30 | 33 |
| 2016 | 26 | 26 |
| 2017 | 24 | 18 |
| 2018 | 30 | 26 |
| 2019 | 25 | 30 |
| 2020 | 30 | 40 |
| 2021 | 38 | 33 |
| 2022 | 22 | 19 |
| 2023 | 23 | 21 |
| 2024 | 19 | 15 |
| 2025 | 8 | 20 |
| 2026 | 7 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Heterojunction bipolar transistor and base-collector grade layer29 Sep 2026US 12,751,024 B2National Taiwan University
- Gate structure on intrinsic base layer and overhanging lateral sidewall of intrinsic base layer14 Jul 2026US 12,684,841 B2GLOBALFOUNDRIES U. S. Inc.
- Method to suppress base poly linkup overgrowth into the emitter cavity during silicon germanium selective epitaxy growth30 Jun 2026US 12,672,296 B2Texas Instruments Incorporated
- Type I-II transistor with a manufacturable ledge5 May 2026US 12,622,007 B1ElectroPhotonic-IC Inc.
- Utilization of sacrificial material for current electrode formation28 Apr 2026US 12,615,788 B2NXP B. V.
- Iii-v heterojunction bipolar transistor and its manufacturing method1 Oct 2026US 2026/0304809 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Lateral heterojunction bipolar transistor10 Sep 2026US 2026/0271357 A1GLOBALFOUNDRIES U. S. Inc.
- Lateral transistors6 Aug 2026US 2026/0231451 A1GLOBALFOUNDRIES U. S. Inc.
- Structure with spacer on intrinsic base pedestal and related methods6 Aug 2026US 2026/0231488 A1GLOBALFOUNDRIES U. S. Inc.
- Heterojunction bipolar transistor device2 Jul 2026US 2026/0190363 A1Quanzhou Sanan Integrated Circuit Co., Ltd.
Most cited
By later US patents
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Low emitter resistance contacts to GaAs high speed HBT80US 6,661,037 B2MicroLink Devices, Inc. · 2003
- AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor78US 6,917,061 B2MicroLink Devices, Inc. · 2005
- BiFET including a FET having increased linearity and manufacturability46US 6,906,359 B2Skyworks Solutions, Inc. · 2005
- Heterojunction bipolar transistor having heterostructure ballasting emitter37US 5,859,447 A1999