Type I-II transistor with a manufacturable ledge
AssigneeElectroPhotonic-IC Inc.
InventorsLawrence E. Tarof, Barry Wu, Dhiraj Kumar, Milton Feng
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Abstract
A transistor comprising a plurality of semiconductor layers arranged to form a base, an emitter and a collector wherein the emitter is of a first semiconductor material and comprises an emitter ledge being made from a material which is selectively etchable relative to the emitter or base material to produce the emitter ledge that is lattice matched.
Claims28
A heterojunction bipolar transistor comprising a plurality of semiconductor layers, selected from an InP-based materials system, arranged to form a base, an emitter and a collector wherein the emitter has a graded emitter structure comprising an emitter ledge, the emitter ledge comprising a layer of an etch selective material which is selectively etchable relative to at least one of the materials of the emitter and the base:
- wherein the collector and the emitter comprise InP, the base comprises GaAsSb, the emitter ledge comprises InAIP, and wherein the etch selective material is of the emitter ledge and is selected from a set of Al containing quaternary semiconductor materials (Al-Q) of said InP-based materials system, having a conduction band-similar to a point in the emitter layer at a ledge etch point for a specific composition of InAlP.
Dependencies are inferred from the claim text.