Gate structure on intrinsic base layer and overhanging lateral sidewall of intrinsic base layer
AssigneeGlobalFoundries U.S. Inc.
InventorsAlexander M. Derrickson, Hong Yu, Judson Robert Holt, Andreas Knorr, Vibhor Jain, Jeffrey Bowman Johnson, Alexander L. Martin, Jhnanesh Somayaji
Life of this patent
Estimating the term…
Abstract
A structure including a first emitter-collector (E/C) layer over a substrate. The structure further includes an intrinsic base layer over the first E/C layer and a second E/C layer over the intrinsic base layer. The structure includes an extrinsic base layer on the intrinsic base layer and adjacent the second E/C layer. The structure includes a gate structure on the intrinsic base layer and overhanging a lateral sidewall of the intrinsic base.
Claims20
A structure, comprising:
- a first emitter-collector (E/C) layer over a substrate;
- an intrinsic base layer over the first E/C layer;
- a second E/C layer over the intrinsic base layer;
- an extrinsic base layer on the intrinsic base layer and adjacent the second E/C layer;
- and
- a gate structure on the intrinsic base layer and overhanging a lateral sidewall of the intrinsic base layer.
A structure, comprising:
- a first emitter-collector (E/C) layer over a substrate;
- an intrinsic base layer over the first E/C layer;
- a second E/C layer over the intrinsic base layer;
- an extrinsic base layer on the intrinsic base layer and adjacent the second E/C layer;
- an E/C terminal on the first E/C layer and laterally distal to the intrinsic base layer;
- and
- a gate structure on the E/C terminal and overhanging a lateral sidewall of E/C terminal.
A method, comprising:
- forming a first emitter-collector (E/C) layer over a substrate;
- forming an intrinsic base layer over the first E/C layer;
- forming a second E/C layer over the intrinsic base layer;
- forming an extrinsic base layer on the intrinsic base layer and adjacent the second E/C layer;
- and
- forming a gate structure on the intrinsic base layer and overhanging a lateral sidewall of the intrinsic base layer.
Dependencies are inferred from the claim text.