Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode separated from the first electrode;
• a first region located on a portion of the first electrode and positioned between the first electrode and the second electrode, the first region including
• a first semiconductor region of a first conductivity type,
• a second semiconductor region of a second conductivity type, a portion of the second semiconductor region being located on the first semiconductor region,
• a plurality of third semiconductor regions located on the portion of the second semiconductor region, the plurality of third semiconductor regions being of the first conductivity type,
• a gate electrode facing one of the plurality of third semiconductor regions via a gate insulating layer in a second direction perpendicular to a first direction, the first direction being from the first electrode toward the second electrode,
• a conductive part facing an other one of the plurality of third semiconductor regions via an insulating layer in the second direction, the conductive part being electrically connected with the second electrode,
• a fourth semiconductor region located on the one of the plurality of third semiconductor regions, the fourth semiconductor region being of the second conductivity type,
• a fifth semiconductor region located on the one of the plurality of third semiconductor regions, the fifth semiconductor region being of the first conductivity type, a first-conductivity-type impurity concentration of the fifth semiconductor region being greater than a first-conductivity-type impurity concentration of the one of the plurality of third semiconductor regions, and
• a sixth semiconductor region located on the other one of the plurality of third semiconductor regions, the sixth semiconductor region being of the first conductivity type, a first-conductivity-type impurity concentration of the sixth semiconductor region being greater than a first-conductivity-type impurity concentration of the other one of the plurality of third semiconductor regions, an area of the sixth semiconductor region per unit area being greater than an area of the fifth semiconductor region per unit area at a first plane perpendicular to the first direction;
• and
• a second region located on an other portion of the first electrode and positioned between the first electrode and the second electrode, the second region including
• a seventh semiconductor region of the second conductivity type, the seventh semiconductor region having a higher second-conductivity-type impurity concentration than the second semiconductor region,
• an other portion of the second semiconductor region located on the seventh semiconductor region, and
• an eighth semiconductor region located on the other portion of the second semiconductor region, the eighth semiconductor region being of the first conductivity type.