H10D 62/141
Anode or cathode regions of thyristors
Official title: {Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs}
H10D62/141 (Anode or cathode regions of thyristors) appears on 1,611 US grants and 1,727 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,611
- Published applications
- 1,727
- Assignees
- 301
- Inventors
- 1,792
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 8 | 0 |
| 1978 | 6 | 0 |
| 1979 | 3 | 0 |
| 1980 | 6 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 7 | 0 |
| 1987 | 7 | 0 |
| 1988 | 11 | 0 |
| 1989 | 14 | 0 |
| 1990 | 16 | 0 |
| 1991 | 17 | 0 |
| 1992 | 18 | 0 |
| 1993 | 10 | 0 |
| 1994 | 10 | 0 |
| 1995 | 6 | 0 |
| 1996 | 9 | 0 |
| 1997 | 10 | 0 |
| 1998 | 10 | 0 |
| 1999 | 7 | 0 |
| 2000 | 9 | 0 |
| 2001 | 3 | 3 |
| 2002 | 6 | 9 |
| 2003 | 11 | 9 |
| 2004 | 14 | 19 |
| 2005 | 10 | 21 |
| 2006 | 9 | 16 |
| 2007 | 17 | 33 |
| 2008 | 17 | 27 |
| 2009 | 19 | 29 |
| 2010 | 30 | 53 |
| 2011 | 28 | 45 |
| 2012 | 39 | 46 |
| 2013 | 50 | 51 |
| 2014 | 49 | 68 |
| 2015 | 67 | 93 |
| 2016 | 89 | 128 |
| 2017 | 101 | 130 |
| 2018 | 117 | 131 |
| 2019 | 126 | 145 |
| 2020 | 136 | 127 |
| 2021 | 91 | 103 |
| 2022 | 98 | 127 |
| 2023 | 76 | 81 |
| 2024 | 66 | 116 |
| 2025 | 91 | 71 |
| 2026 | 46 | 46 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Thyristor based on charge plasma and cross-point memory array including the same6 Oct 2026US 12,757,476 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Semiconductor device25 Aug 2026US 12,720,816 B2Mitsubishi Electric Corporation
- Insulated gate bipolar transistor with an electric field stop layer and preparation method thereof, and electronic device25 Aug 2026US 12,720,822 B2BYD Semiconductor Company Limited
- Semiconductor device including a first element structure with a column layer and a second element structure25 Aug 2026US 12,720,849 B2Rohm Co., Ltd.
- Insulated-gate bipolar transistor device as well as a data transmission system implementing such insulated-gate bipolar transistor device18 Aug 2026US 12,713,707 B2Nexperia B. V.
- Reverse blocking insulated-gate bipolar transistor13 Aug 2026US 2026/0239640 A1Littelfuse, Inc.
- Super-junction igbt device with separation gate structures and preparation method thereof13 Aug 2026US 2026/0239641 A1Chongqing Alpha and Omega Semiconductor Limited
- Semiconductor device and method of manufacturing semiconductor device13 Aug 2026US 2026/0239642 A1Mitsubishi Electric Corporation
- Semiconductor device and manufacturing method13 Aug 2026US 2026/0239724 A1Kabushiki Kaisha Toshiba
- Semiconductor device6 Aug 2026US 2026/0231489 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Insulated gate semiconductor device with extra short grid and method of fabrication110US 4,821,095 AGeneral Electric Company · 1989
- Conductivity-modulation metal oxide field effect transistor with single gate structure101US 5,105,243 AKabushiki Kaisha Toshiba · 1992
- Insulated gate bipolar transistor with reverse conducting current94US 5,519,245 ANippondenso Co., Ltd. · 1996
- Three-terminal semiconductor device and related semiconductor devices90US 5,828,101 AKabushiki Kaisha Toshiba · 1998
- Semiconductor device having high breakdown voltage70US 5,162,876 AKabushiki Kaisha Toshiba · 1992