US 5,105,243 A · Conductivity-modulation metal oxide field effect transistor with single gate structure

Abstract

There is disclosed a single-gate type conductivity-modulation field effect transistor having a first base layer, a second base layer, and a source layer formed in the second base layer. A source electrode is provided on a surface of the first base layer, for electrically shorting the second base layer with the source layer. A drain layer is provided in the first base layer surface. A drain electrode is formed on the layer surface to be in contact with the drain layer. A gate electrode is insulatively provided above the layer surface, for covering a certain surface portion of the second base layer which is positioned between the first base layer and the source layer to define a channel region below the gate electrode. A heavily-doped semiconductor layer is formed in the drain layer to have the opposite conductivity type to that of the drain layer. This semiconductor layer is in contact with the drain electrode. When the transistor is turned off, this layer facilitates carriers accumulated in the first base layer to flow into the drain electrode through the drain layer, thereby accelerating dispersion of the carriers in said transistor.

Claims12

Dependent claims

A semiconductor device comprising:

a semiconductor substrate;
a conductivity-modulation field effect transistor formed on said substrate, said transistor having a base region of a first conductivity type, a source region of a second conductivity type formed in one portion of said base region, a source electrode for electrically connecting said base region and said source region with each other, a drain region of the first conductivity type formed in another portion of said base region, a drain electrode formed on said drain region, and a gate electrode insulatively provided above said substrate on a channel region formed between source and drain regions;
and
means for, when said transistor is turned off, facilitating carriers in said device to flow into said drain electrode, thereby accelerating dispersion of the carriers in said transistor, said means comprising a first heavily-doped semiconductive layer of the second conductivity type which is formed in said drain region to have a conductivity type opposite to that of said drain region, said semiconductive layer being in contact with said drain electrode.

1 more element

A single-gate type conductivity-modulation field effect transistor comprising:

a first base layer having a surface;
a second base layer of a first conductivity type provided in the surface of said first base layer;
a source layer provided in said second base layer;
a source electrode provided on the layer surface, for electrically shorting said second base layer with said source layer;
a drain layer having said first conductivity type provided in said layer surface;
a drain electrode formed on said layer surface to be in contact with said drain layer;
a gate electrode insulatively provided above said layer surface, for covering a certain surface portion of said second base layer which is positioned between said first base layer and said source layer to define a channel region below said gate electrode;
and
a heavily-doped semiconductor layer of a second conductivity type which is provided in a selected surface portion of said drain layer and which is included in said drain layer to be in contact with said drain electrode, said heavily-doped semiconductor layer facilitating, when said transistor is turned off, carriers accumulated in said first base layer to flow into said drain electrode through said drain layer, thereby accelerating dispersion of the carriers in said transistor;
and
wherein said first base layer and said source layer have said second conductivity type.

8 more elements

Dependencies are inferred from the claim text.

Conductivity-modulation metal oxide field effect transistor with single gate structure

Life of this patent

Conductivity-modulation metal oxide field effect transistor with single gate structure

Life of this patent

Abstract

Claims12