H10D 62/145
Emitter regions of igbts
Official title: {Emitter regions of IGBTs}
H10D62/145 (Emitter regions of igbts) appears on 133 US grants and 170 published applications in this corpus.
Search patents in H10D- Granted patents
- 133
- Published applications
- 170
- Assignees
- 47
- Inventors
- 258
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
| 2015 | 2 | 3 |
| 2016 | 4 | 3 |
| 2017 | 0 | 3 |
| 2018 | 3 | 7 |
| 2019 | 10 | 35 |
| 2020 | 22 | 28 |
| 2021 | 24 | 15 |
| 2022 | 18 | 27 |
| 2023 | 13 | 16 |
| 2024 | 11 | 10 |
| 2025 | 16 | 12 |
| 2026 | 4 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Insulated-gate bipolar transistor device as well as a data transmission system implementing such insulated-gate bipolar transistor device18 Aug 2026US 12,713,707 B2Nexperia B. V.
- IGBT with shared emitter contact9 Jun 2026US 12,652,848 B2Renesas Electronics Corporation
- Insulated gate bipolar transistor (IGBT) semiconductor device with reduced turn-on loss12 May 2026US 12,628,362 B2Kabushiki Kaisha Toshiba
- Forming an electronic device, such as a JBS or MPS diode, based on 3C—SiC, and 3C—SiC electronic device31 Mar 2026US 12,593,485 B2STMicroelectronics S,r.l.
- Semiconductor device16 Dec 2025US 12,501,635 B2Mitsubishi Electric Corporation
- Super-junction igbt device with separation gate structures and preparation method thereof13 Aug 2026US 2026/0239641 A1Chongqing Alpha and Omega Semiconductor Limited
- Semiconductor device6 Aug 2026US 2026/0231489 A1Fuji Electric Co., Ltd.
- Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device16 Jul 2026US 2026/0206273 A1STMicroelectronics S,r.l.
- Semiconductor device21 May 2026US 2026/0143766 A1Fuji Electric Co., Ltd.
- Semiconductor device21 May 2026US 2026/0143767 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Method for making semi-conductor nanocrystals35US 8,647,957 B2Centre National De La Recherche Scientifique · 2014
- Semiconductor device14US 6,891,224 B2Kabushiki Kaisha Toshiba · 2005
- Power semiconductor device13US 7,800,168 B2Kabushiki Kaisha Toshiba · 2010
- Semiconductor device6US 10,438,852 B2Denso Corporation · 2019
- Semiconductor device6US 11,069,771 B2Rohm Co., Ltd. · 2021