Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device
AssigneeSTMicroelectronics S.r.l.
InventorsSimone RASCUNA', Fabrizio ROCCAFORTE, Gabriele BELLOCCHI, Marilena VIVONA
Life of this patent
Estimating the term…
Abstract
A method for manufacturing an electronic device includes forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.
Claims20
An electronic device, comprising:
- a solid body of 4H-SiC having a first electrical conductivity;
- at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity extending at a front side of the solid body;
- a 3C-SiC layer on the front side;
- a silicon layer on the 3C-SiC layer;
- a carbon-rich layer on the silicon layer;
- a ohmic contact region through the entire thickness of the 3C-SiC layer, the silicon layer and the carbon-rich layer, up to reaching the implanted region;
- and
- a first electrical terminal of conductive material above, and in direct contact with, the carbon-rich layer.
An electronic device, comprising:
- a solid body of 4H-SiC having a first electrical conductivity;
- a first implanted region having a second electrical conductivity opposite to the first electrical conductivity extending at a front side of the solid body, the first implanted region including a source terminal;
- a second implanted region having the second electrical conductivity, extending at the face side of the solid body at a distance from the first implanted region, the second implanted region including a drain terminal;
- a 3C-SiC layer on the front side;
- a gate dielectric, of silicon oxide, on the 3C-SiC layer between the first and second implanted regions;
- and
- an electrical gate terminal, of metallic material, above, and in direct contact with, the gate dielectric.
A device, comprising:
- a layer of 4H-SiC of a first conductivity type;
- a first implanted region of a second conductivity type extending from a top surface of the layer of 4H-SiC into the layer of 4H-SiC;
- a second implanted region extending from a top surface of the layer of 4H-SiC into the layer of 4H-SiC;
- a multilayer stack on the layer of 4H-SiC including a carbon rich layer;
- a first ohmic contact extending through the multilayer stack to contact the first implanted region;
- and
- a first electrical terminal of conductive material above, and in direct contact with, the carbon-rich layer, wherein the first electrical terminal forms a Schottky diode with the carbon-rich layer and a junction-barrier diode with the ohmic contact region.
Dependencies are inferred from the claim text.