Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having a drift layer of a first conductivity type between a first main surface and a second main surface opposite to the first main surface;
• a diode region having an anode layer of a second conductivity type provided in a surface layer of the semiconductor substrate on the first main surface side and a cathode layer of the first conductivity type provided in a surface layer of the semiconductor substrate on the second main surface side;
• an insulated gate bipolar transistor region arranged in line with the diode region along the first main surface of the semiconductor substrate in a first direction having a base layer of the second conductivity type provided in the surface layer of the semiconductor substrate on the first main surface side, an emitter layer of the first conductivity type having an impurity concentration higher than that of the drift layer selectively provided in a surface layer of the base layer on the first main surface side, a plurality of gate electrodes arranged side by side in the first direction and facing the emitter layer, the base layer, and the drift layer via gate insulating films, a counter-doped layer provided in a surface layer of the base layer, having an impurity concentration of the second conductivity type higher than that of the base layer and an impurity concentration of the first conductivity type higher than that of the drift layer, and a collector layer of the second conductivity type provided in the surface layer of the semiconductor substrate on the second main surface side, wherein
• each of the counter-doped layer and the emitter layer has a longitudinal direction and a lateral direction orthogonal to the longitudinal direction in plan view, and
• a maximum width of the lateral direction of the counter-doped layer is narrower than a width of the lateral direction of the emitter layer.