Semiconductor device

A semiconductor device comprising:

• a drift region of a first conductivity type provided in a semiconductor substrate;
• a base region of a second conductivity type provided above the drift region;
• an emitter region of the first conductivity type provided on a front surface of the semiconductor substrate and having a doping concentration higher than that of the drift region;
• a contact region of the second conductivity type provided above the drift region and having a doping concentration higher than that of the base region;
• a trench contact portion extending from the front surface of the semiconductor substrate in a depth direction of the semiconductor substrate;
• and
• a plurality of trench portions extending in a predefined trench extending direction on a front-surface side of the semiconductor substrate,
• wherein the plurality of trench portions includes a gate trench portion and a dummy trench portion, and
• a mesa portion between the plurality of trench portions has:
• a contact formation region in which the contact region is provided below the emitter region on a sidewall of at least one trench portion of the plurality of trench portions;
• and
• a contact non-formation region in which the contact region is not provided below the emitter region on a sidewall of the gate trench portion.