Semiconductor device

A semiconductor device comprising:

• a drift region of a first conductivity type which is provided in a semiconductor substrate;
• a gate trench portion provided on a front surface of the semiconductor substrate;
• a base region of a second conductivity type which is provided above the drift region;
• an emitter region of the first conductivity type which is provided above the base region and has a doping concentration which is higher than the drift region;
• and
• a trench contact portion which is provided from the front surface of the semiconductor substrate to a position deeper than an upper end of the base region, wherein
• the emitter region comprises
• a first emitter portion which is in contact with the front surface of the semiconductor substrate;
• a second emitter portion which is provided below the first emitter portion and has a doping concentration which is lower than the first emitter portion;
• and
• a third emitter portion which is provided below the second emitter portion and has a doping concentration which is higher than the second emitter portion, and
• the trench contact portion comprises
• a trench contact conductive portion;
• and
• a trench contact dielectric film provided at least partially on a side surface of the trench contact portion, and
• the trench contact dielectric film is provided between the trench contact conductive portion and the third emitter portion.