Forming an electronic device, such as a JBS or MPS diode, based on 3C—SiC, and 3C—SiC electronic device

A method for manufacturing an electronic device, the method comprising:

• forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity;
• forming, on the front side, a 3C-SiC layer;
• forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region, wherein forming the 3C-SiC layer includes:
• heating, through a LASER beam, at least one portion of the front side of the solid body, at least up to a melting temperature of the 4H-SiC material;
• and
• allowing the cooling and crystallization of the melted portion of the solid body, forming a stack of superimposed layers including:
• the 3C-SiC layer in contact with the solid body, a silicon layer on the 3C-SiC layer, and a carbon-rich layer on the silicon layer,
• removing the carbon-rich layer, including one among:
• performing a step of oxidating the carbon-rich layer, and a subsequent step of etching the oxidized carbon-rich layer, or
• performing an etching for selectively removing the carbon-rich layer.

A method, comprising:

• forming, in a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity extending at a front side of the solid body;
• forming a 3C-SiC layer on the front side;
• forming a silicon layer on the 3C-SiC layer;
• forming a carbon-rich layer on the silicon layer;
• forming an ohmic contact region through the entire thickness of the 3C-SiC layer, the silicon layer and the carbon-rich layer, up to reaching the implanted region;
• and
• forming a first electrical terminal of conductive material above, and in direct contact with, the carbon-rich layer.