H10D 62/142
Anode regions of thyristors or collector regions of gated bipolar-mode devices
Official title: {Anode regions of thyristors or collector regions of gated bipolar-mode devices}
H10D62/142 (Anode regions of thyristors or collector regions of gated bipolar-mode devices) appears on 1,291 US grants and 1,407 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,291
- Published applications
- 1,407
- Assignees
- 248
- Inventors
- 1,452
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 7 | 0 |
| 1988 | 5 | 0 |
| 1989 | 11 | 0 |
| 1990 | 14 | 0 |
| 1991 | 16 | 0 |
| 1992 | 17 | 0 |
| 1993 | 8 | 0 |
| 1994 | 9 | 0 |
| 1995 | 4 | 0 |
| 1996 | 8 | 0 |
| 1997 | 7 | 0 |
| 1998 | 7 | 0 |
| 1999 | 4 | 0 |
| 2000 | 6 | 0 |
| 2001 | 3 | 2 |
| 2002 | 6 | 8 |
| 2003 | 9 | 8 |
| 2004 | 11 | 12 |
| 2005 | 6 | 17 |
| 2006 | 7 | 12 |
| 2007 | 11 | 27 |
| 2008 | 13 | 24 |
| 2009 | 17 | 25 |
| 2010 | 26 | 46 |
| 2011 | 25 | 43 |
| 2012 | 32 | 38 |
| 2013 | 48 | 44 |
| 2014 | 42 | 62 |
| 2015 | 61 | 81 |
| 2016 | 75 | 112 |
| 2017 | 87 | 100 |
| 2018 | 97 | 118 |
| 2019 | 104 | 111 |
| 2020 | 110 | 94 |
| 2021 | 66 | 80 |
| 2022 | 74 | 96 |
| 2023 | 58 | 60 |
| 2024 | 48 | 93 |
| 2025 | 68 | 55 |
| 2026 | 41 | 39 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Insulated gate bipolar transistor with an electric field stop layer and preparation method thereof, and electronic device25 Aug 2026US 12,720,822 B2BYD Semiconductor Company Limited
- Semiconductor device including a first element structure with a column layer and a second element structure25 Aug 2026US 12,720,849 B2Rohm Co., Ltd.
- Semiconductor device and method of manufacturing the same11 Aug 2026US 12,707,663 B2Renesas Electronics Corporation
- Reverse blocking insulated-gate bipolar transistor13 Aug 2026US 2026/0239640 A1Littelfuse, Inc.
- Semiconductor device and method of manufacturing semiconductor device13 Aug 2026US 2026/0239642 A1Mitsubishi Electric Corporation
- Semiconductor device and manufacturing method13 Aug 2026US 2026/0239724 A1Kabushiki Kaisha Toshiba
- Semiconductor device6 Aug 2026US 2026/0231489 A1Fuji Electric Co., Ltd.
- Semiconductor device6 Aug 2026US 2026/0231512 A1Minebea Power Semiconductor Device Inc.
Most cited
By later US patents
- Insulated gate semiconductor device with extra short grid and method of fabrication110US 4,821,095 AGeneral Electric Company · 1989
- Conductivity-modulation metal oxide field effect transistor with single gate structure101US 5,105,243 AKabushiki Kaisha Toshiba · 1992
- Insulated gate bipolar transistor with reverse conducting current94US 5,519,245 ANippondenso Co., Ltd. · 1996
- Three-terminal semiconductor device and related semiconductor devices90US 5,828,101 AKabushiki Kaisha Toshiba · 1998
- Semiconductor device having high breakdown voltage70US 5,162,876 AKabushiki Kaisha Toshiba · 1992