H10D 62/148
Cathode regions of thyristors
Official title: {Cathode regions of thyristors}
H10D62/148 (Cathode regions of thyristors) appears on 190 US grants and 135 published applications in this corpus.
Search patents in H10D- Granted patents
- 190
- Published applications
- 135
- Assignees
- 105
- Inventors
- 318
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 8 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 6 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 2 | 1 |
| 2004 | 2 | 5 |
| 2005 | 2 | 2 |
| 2006 | 2 | 3 |
| 2007 | 4 | 6 |
| 2008 | 3 | 4 |
| 2009 | 2 | 5 |
| 2010 | 3 | 9 |
| 2011 | 5 | 3 |
| 2012 | 7 | 6 |
| 2013 | 3 | 8 |
| 2014 | 9 | 6 |
| 2015 | 6 | 7 |
| 2016 | 8 | 6 |
| 2017 | 6 | 7 |
| 2018 | 9 | 8 |
| 2019 | 8 | 10 |
| 2020 | 6 | 10 |
| 2021 | 4 | 7 |
| 2022 | 9 | 8 |
| 2023 | 8 | 4 |
| 2024 | 5 | 7 |
| 2025 | 6 | 3 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Thyristor based on charge plasma and cross-point memory array including the same6 Oct 2026US 12,757,476 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Bidirectional thyristor13 Jan 2026US 12,527,017 B2Shindengen Electric Manufacturing Co., Ltd.
- Bidirectional thyristor device30 Dec 2025US 12,513,928 B2Hitachi Energy Ltd
- Module comprising a switchable bypass device30 Dec 2025US 12,513,975 B2Hitachi Energy Ltd
- Low capacitance silicon controlled rectifier topology for overvoltage protection18 Nov 2025US 12,477,836 B2Analog Devices, Inc.
- Substrate-less silicon controlled rectifier (scr) integrated circuit structures14 Aug 2025US 2025/0261452 A1Intel Corporation
- Low capacitance silicon controlled rectifier topology for overvoltage protection12 Jun 2025US 2025/0194260 A1Analog Devices, Inc.
- Insulated trench gate with multiple layers form improved performance of semiconductor devices30 Jan 2025US 2025/0040229 A1Pakal Technologies, Inc.
- Thyristor based on charge plasma and cross-point memory array including the same26 Sep 2024US 2024/0322023 A1Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Bidirectional thyristor15 Aug 2024US 2024/0274700 A1Shindengen Electric Manufacturing Co., Ltd.
Most cited
By later US patents
- Externally controlled semiconductor devices with integral thyristor and bridging FET components52US 4,224,634 AASEA Aktiebolag · 1980
- Dual-channel emitter switched thyristor with trench gate44US 5,471,075 ANorth Carolina State University · 1995
- Power semiconductor device26US 6,809,349 B2Kabushiki Kaisha Toshiba · 2004
- MIS controlled gate turn-off thyristor24US 4,717,940 AKabushiki Kaisha Toshiba · 1988
- Turbine engine ignition exciter circuit including low voltage lockout control23US 5,656,966 ACooper Industries, Inc. · 1997