H10D 62/157
Impurity concentrations or distributions
Official title: {Impurity concentrations or distributions}
H10D62/157 (Impurity concentrations or distributions) appears on 3,123 US grants and 3,643 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,123
- Published applications
- 3,643
- Assignees
- 469
- Inventors
- 3,244
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 5 | 0 |
| 1990 | 10 | 0 |
| 1991 | 7 | 0 |
| 1992 | 8 | 0 |
| 1993 | 5 | 0 |
| 1994 | 10 | 0 |
| 1995 | 16 | 0 |
| 1996 | 21 | 0 |
| 1997 | 11 | 0 |
| 1998 | 23 | 0 |
| 1999 | 27 | 0 |
| 2000 | 19 | 0 |
| 2001 | 21 | 14 |
| 2002 | 27 | 45 |
| 2003 | 36 | 57 |
| 2004 | 48 | 62 |
| 2005 | 61 | 80 |
| 2006 | 37 | 96 |
| 2007 | 66 | 113 |
| 2008 | 57 | 107 |
| 2009 | 71 | 149 |
| 2010 | 118 | 149 |
| 2011 | 146 | 161 |
| 2012 | 130 | 168 |
| 2013 | 178 | 177 |
| 2014 | 217 | 263 |
| 2015 | 240 | 231 |
| 2016 | 203 | 191 |
| 2017 | 174 | 145 |
| 2018 | 143 | 163 |
| 2019 | 175 | 190 |
| 2020 | 162 | 159 |
| 2021 | 147 | 140 |
| 2022 | 103 | 161 |
| 2023 | 101 | 177 |
| 2024 | 100 | 178 |
| 2025 | 110 | 154 |
| 2026 | 80 | 113 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Semiconductor device22 Sep 2026US 12,745,433 B2Fuji Electric Co., Ltd.
- Transistor8 Sep 2026US 12,733,202 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing the same8 Sep 2026US 12,733,204 B2Rohm Co., Ltd.
- Semiconductor device25 Aug 2026US 12,720,817 B2Rohm Co., Ltd.
- Semiconductor device and method of forming the same17 Sep 2026US 2026/0282460 A1Vanguard International Semiconductor Corporation
- High voltage semiconductor device3 Sep 2026US 2026/0262245 A1United Microelectronics Corp.
- High voltage semiconductor device3 Sep 2026US 2026/0262246 A1United Microelectronics Corp.
- Semiconductor device and method for manufacturing the same27 Aug 2026US 2026/0255630 A1Silergy Semiconductor Technology (Hangzhou) LTD
- Silicon carbide semiconductor device27 Aug 2026US 2026/0255631 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000