Semiconductor device

A semiconductor device comprising:

• a chip having a main surface;
• a first potential region formed in a surface layer portion of the main surface;
• a second potential region formed in the surface layer portion of the main surface at a distance from the first potential region;
• a first conductivity type drift region formed in a region between the first potential region and the second potential region in the surface layer portion of the main surface;
• RESURF arrays each of which includes first conductivity type RESURF regions arranged in a surface layer portion of the drift region at a distance from each other in a first direction so as to expose a part of the drift region from the main surface, each of the RESURF regions having an impurity concentration exceeding an impurity concentration of the drift region, the RESURF arrays being arranged at a distance from each other in a second direction that intersects the first direction;
• a field insulating film covering the drift region and the RESURF arrays on the main surface;
• and
• a field electrode arranged on the field insulating film so as to cover the RESURF arrays.