Silicon carbide semiconductor device

A semiconductor power device having an active region and an edge termination region, wherein in a top view of the semiconductor power device, the edge termination region is located between the active region and a chip end of the semiconductor power device and surrounds the active region, the semiconductor power device comprising:

• a semiconductor substrate that includes:
• a drain region of a first conductivity type;
• a plurality of drift regions of the first conductivity type and a plurality of partition regions of a second conductivity type alternately formed, one in contact with another, over the drain region, thereby forming a plurality of pn junctions, each pn junction extending in a depth direction of the semiconductor power device;
• a connecting region of the second conductivity type formed on two or more of the plurality of drift regions in the edge termination region, thereby connecting two or more of the plurality of partition regions in the edge termination region to one another;
• and
• at least one electrically-floating region of the first conductivity type, formed on the connecting region in the edge termination region.