H10D 62/152
Source regions of dmos transistors
Official title: {Source regions of DMOS transistors}
H10D62/152 (Source regions of dmos transistors) appears on 1,640 US grants and 1,954 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,640
- Published applications
- 1,954
- Assignees
- 326
- Inventors
- 2,398
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 7 | 0 |
| 1995 | 9 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 12 | 0 |
| 1999 | 8 | 0 |
| 2000 | 11 | 0 |
| 2001 | 10 | 8 |
| 2002 | 9 | 18 |
| 2003 | 19 | 8 |
| 2004 | 16 | 16 |
| 2005 | 7 | 21 |
| 2006 | 6 | 33 |
| 2007 | 16 | 40 |
| 2008 | 23 | 38 |
| 2009 | 22 | 43 |
| 2010 | 45 | 55 |
| 2011 | 50 | 60 |
| 2012 | 54 | 58 |
| 2013 | 52 | 71 |
| 2014 | 64 | 93 |
| 2015 | 87 | 115 |
| 2016 | 130 | 158 |
| 2017 | 134 | 132 |
| 2018 | 94 | 117 |
| 2019 | 155 | 184 |
| 2020 | 145 | 154 |
| 2021 | 123 | 93 |
| 2022 | 82 | 79 |
| 2023 | 63 | 89 |
| 2024 | 62 | 114 |
| 2025 | 58 | 104 |
| 2026 | 48 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method29 Sep 2026US 12,751,058 B2Hitachi Energy Ltd
- Structure and field effect transistor15 Sep 2026US 12,740,218 B2Murata Manufacturing Co., Ltd.
- Semiconductor device and method of manufacturing the same8 Sep 2026US 12,733,204 B2Rohm Co., Ltd.
- Silicon carbide semiconductor device and method of manufacturing the same8 Sep 2026US 12,733,227 B2Fuji Electric Co., Ltd.
- Semiconductor device with groove structure1 Sep 2026US 12,727,195 B2Rohm Co., Ltd.
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
- Field effect transistor for reducing hot carrier damage and methods for forming the same17 Sep 2026US 2026/0282425 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for manufacturing the same17 Sep 2026US 2026/0282485 A1Kabushiki Kaisha Toshiba
- High voltage semiconductor device3 Sep 2026US 2026/0262245 A1United Microelectronics Corp.
Most cited
By later US patents
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Method for fabricating a strained structure243US 8,497,528 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- Vertical insulated gate transistor and method of manufacture188US 5,473,176 AKabushiki Kaisha Toshiba · 1995
- Method of making a high-voltage transistor with multiple lateral conduction layers182US 6,168,983 APower Integrations, Inc. · 2001