H10D 62/154
Dispositions
Official title: {Dispositions}
H10D62/154 (Dispositions) appears on 713 US grants and 865 published applications in this corpus.
Search patents in H10D- Granted patents
- 713
- Published applications
- 865
- Assignees
- 189
- Inventors
- 1,234
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 1 |
| 2002 | 2 | 2 |
| 2003 | 2 | 0 |
| 2004 | 2 | 1 |
| 2005 | 0 | 3 |
| 2006 | 0 | 5 |
| 2007 | 3 | 4 |
| 2008 | 2 | 9 |
| 2009 | 5 | 6 |
| 2010 | 7 | 10 |
| 2011 | 10 | 20 |
| 2012 | 16 | 17 |
| 2013 | 13 | 24 |
| 2014 | 28 | 37 |
| 2015 | 31 | 43 |
| 2016 | 66 | 98 |
| 2017 | 79 | 93 |
| 2018 | 63 | 74 |
| 2019 | 88 | 112 |
| 2020 | 93 | 85 |
| 2021 | 69 | 41 |
| 2022 | 34 | 29 |
| 2023 | 26 | 28 |
| 2024 | 24 | 57 |
| 2025 | 21 | 52 |
| 2026 | 18 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with groove structure1 Sep 2026US 12,727,195 B2Rohm Co., Ltd.
- Wide bandgap transistor layout with unequal gate electrode finger widths25 Aug 2026US 12,720,842 B2Skyworks Solutions, Inc.
- Power device with low gate charge and low figure of merit18 Aug 2026US 12,713,646 B2Infineon Technologies Americas Corp.
- Semiconductor device and method for manufacturing a semiconductor device28 Jul 2026US 12,696,517 B2Infineon Technologies AG
- Frontside ILD optimization for backside power distribution network7 Jul 2026US 12,677,453 B2International Business Machines Corporation
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
- Transistor device and manufacturing method thereof20 Aug 2026US 2026/0247659 A1ProAsia Semiconductor Corporation
- Transistor device and manufacturing method thereof13 Aug 2026US 2026/0239695 A1ProAsia Semiconductor Corporation
- Sic mosfet with improved high current on-resistance performance30 Jul 2026US 2026/0223390 A1Renesas Electronics Corporation
- Semiconductor device and fabrication method thereof2 Apr 2026US 2026/0096186 A1Vanguard International Semiconductor Corporation
Most cited
By later US patents
- Silicon carbide field effect device81US 5,323,040 ANorth Carolina State University at Raleigh · 1994
- Method of fabrication lateral FET structure having a substrate to source contact69US 4,738,936 AAcrian, Inc. · 1988
- MOSFET with perimeter channel64US 4,532,534 ARCA Corporation · 1985
- Nanotube semiconductor devices60US 8,299,494 B2Alpha and Omega Semiconductor Incorporated · 2012
- Method of manufacturing a semiconductor device58US 6,025,233 ANGK Insulators, Ltd. · 2000