Back to results
US 4,532,534 AGranted
MOSFET with perimeter channel
AssigneeRCA Corporation
InventorsRaymond T. Ford, Norbert W. Brackelmanns, Carl F. Wheatley, Jr., John M. S. Neilson
Life of this patent
Estimating the term…
Abstract
A vertical MOSFET device includes a major surface having an active, gate-controlled portion adjacent to an inactive portion. A gate-controlled perimeter channel is disposed at the boundary between the active and inactive portions.
Claims4
A device in accordance with claim 1 wherein each body region is hexagonal in shape at said major surface.
A vertical MOSFET including a major surface having an active gate-controlled portion surrounded by an inactive portion, comprising:
- a body region adjacently surrounded by a drain region at said major surface;
- a source region, disposed within the boundaries of the body region and spaced from the drain region, so as to define a gate-controlled first channel in the body region at the major surface;
- a supplementary body region circumscribing said first channel and being spaced therefrom by the drain region;
- and
- a supplementary source region, disposed within the boundaries of the supplementary body region so as to define an active gate-controlled perimeter channel in the supplementary body region at the major surface, said perimeter channel circumscribing said first channel and being disposed at the boundary between the active portion and the inactive portion.
2 more elements
Dependencies are inferred from the claim text.