Transistor device and manufacturing method thereof

Abstract

A transistor device and a manufacturing method thereof are provided. The transistor device includes a silicon carbide substrate, a silicon carbide epitaxial layer, a first conductive type doped body region, a second conductive type heavily doped region, a source trench and a first conductive type ion doped interface. The silicon carbide epitaxial layer is disposed on the silicon carbide substrate. The first conductive type doped body region is disposed on the silicon carbide epitaxial layer, the second conductive type heavily doped region is disposed in the first conductive type doped body region, the source trench is disposed in the silicon carbide epitaxial layer and is adjacent to the second conductive type heavily doped region and the first conductive type doped body region, and the first conductive ion doped interface is disposed to surround the sidewall of the source trench.

Dependencies are inferred from the claim text.