Transistor device and manufacturing method thereof
AssigneeProAsia Semiconductor Corporation
InventorsMeng-Wei Wu, I-Tai Li, Chen-Hua Lin
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Abstract
A transistor device and a manufacturing method thereof are provided. The transistor device includes a silicon carbide substrate, a silicon carbide epitaxial layer, a gate trench, a first conductive type doped body region and a boron ion doped interface. The silicon carbide epitaxial layer is disposed on the silicon carbide substrate. The gate trench is formed in the silicon carbide epitaxial layer, the first conductive type doped body region is adjacent to the sidewall of the gate trench and is disposed on the silicon carbide epitaxial layer, and the boron ion doped interface is disposed between the gate trench and the silicon carbide epitaxial layer.
Claims15
A transistor device, comprising:
- a silicon carbide substrate;
- a silicon carbide epitaxial layer disposed on the silicon carbide substrate;
- a gate trench disposed in the silicon carbide epitaxial layer;
- a first conductive type doped body region adjacent to a sidewall of the gate trench and is disposed on the silicon carbide epitaxial layer;
- and
- a boron ion doped interface disposed between the gate trench and the silicon carbide epitaxial layer.
A manufacturing method of a transistor device, comprising:
- forming a first conductive type doped body region disposed on a silicon carbide epitaxial layer;
- forming a gate trench disposed in the silicon carbide epitaxial layer, wherein the first conductive type doped body region is adjacent to a sidewall of the gate trench and disposed on the silicon carbide epitaxial layer;
- and
- forming a boron ion doped interface between the gate trench and the silicon carbide epitaxial layer.
Dependencies are inferred from the claim text.