H10D 62/153
Impurity concentrations or distributions
Official title: {Impurity concentrations or distributions}
H10D62/153 (Impurity concentrations or distributions) appears on 708 US grants and 812 published applications in this corpus.
Search patents in H10D- Granted patents
- 708
- Published applications
- 812
- Assignees
- 194
- Inventors
- 1,098
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 4 | 0 |
| 1995 | 6 | 0 |
| 1996 | 3 | 0 |
| 1997 | 0 | 0 |
| 1998 | 9 | 0 |
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 2 | 2 |
| 2002 | 3 | 6 |
| 2003 | 9 | 5 |
| 2004 | 5 | 9 |
| 2005 | 6 | 10 |
| 2006 | 2 | 18 |
| 2007 | 12 | 25 |
| 2008 | 15 | 20 |
| 2009 | 11 | 28 |
| 2010 | 31 | 32 |
| 2011 | 30 | 31 |
| 2012 | 29 | 32 |
| 2013 | 30 | 38 |
| 2014 | 35 | 48 |
| 2015 | 46 | 55 |
| 2016 | 62 | 66 |
| 2017 | 51 | 42 |
| 2018 | 26 | 42 |
| 2019 | 60 | 64 |
| 2020 | 52 | 45 |
| 2021 | 43 | 39 |
| 2022 | 39 | 33 |
| 2023 | 19 | 32 |
| 2024 | 22 | 34 |
| 2025 | 19 | 32 |
| 2026 | 16 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and manufacturing method29 Sep 2026US 12,751,058 B2Hitachi Energy Ltd
- Semiconductor device and method of manufacturing the same8 Sep 2026US 12,733,204 B2Rohm Co., Ltd.
- Silicon carbide semiconductor device and method of manufacturing the same8 Sep 2026US 12,733,227 B2Fuji Electric Co., Ltd.
- Lateral fin field-effect transistors4 Aug 2026US 12,701,738 B2Texas Instruments Incorporated
- Semiconductor device21 Jul 2026US 12,690,231 B2Fuji Electric Co., Ltd.
- Field effect transistor for reducing hot carrier damage and methods for forming the same17 Sep 2026US 2026/0282425 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High voltage semiconductor device3 Sep 2026US 2026/0262245 A1United Microelectronics Corp.
- High voltage semiconductor device3 Sep 2026US 2026/0262246 A1United Microelectronics Corp.
- Transistor device and manufacturing method thereof20 Aug 2026US 2026/0247672 A1ProAsia Semiconductor Corporation
- Transistor device and manufacturing method thereof13 Aug 2026US 2026/0239694 A1ProAsia Semiconductor Corporation
Most cited
By later US patents
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Vertical insulated gate transistor and method of manufacture188US 5,473,176 AKabushiki Kaisha Toshiba · 1995
- Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor180US 7,405,117 B2Volterra Semiconductor Corporation · 2008
- LDMOS power device with oversized dwell96US 6,424,005 B1Texas Instruments Incorporated · 2002
- Method of forming insulated gate field-effect transistors74US 5,275,961 ATexas Instruments Incorporated · 1994