Transistor device and manufacturing method thereof
AssigneeProAsia Semiconductor Corporation
InventorsMeng-Wei Wu, I-Tai Li
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Abstract
A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, an epitaxial composite layer, a gate trench, a source trench, and a boron atom doped interface. The epitaxial composite layer is disposed on the silicon carbide substrate. The gate trench is disposed in the epitaxial composite layer. The source trench is adjacent to the gate trench and disposed in the epitaxial composite layer. The boron atom doped interface is disposed between the source trench and the epitaxial composite layer.
Claims15
A transistor device, comprising:
- a substrate;
- an epitaxial composite layer disposed on the substrate;
- a gate trench disposed in the epitaxial composite layer;
- a source trench adjacent to the gate trench and disposed in the epitaxial composite layer;
- and
- a boron atom doped interface surrounding the source trench and disposed between the source trench and the epitaxial composite layer.
A manufacturing method of a transistor device, comprising:
- providing an epitaxial composite layer disposed on a substrate;
- providing a gate trench disposed in the epitaxial composite layer;
- providing a source trench adjacent to the gate trench and disposed in the epitaxial composite layer;
- and
- providing a boron atom doped interface surrounding the source trench and disposed between the source trench and the epitaxial composite layer.
Dependencies are inferred from the claim text.