Semiconductor device and method for manufacturing the same

Abstract

The semiconductor device according to the embodiment includes a plurality of gate electrodes, a semiconductor portion and a first electrode. The plurality of gate electrodes is arranged along a first direction. The semiconductor portion is including a first conductivity type semiconductor region provided between the plurality of gate electrodes. The first electrode has a contact portion in contact with the semiconductor region between the plurality of gate electrodes. The semiconductor region includes a first portion having a first width in the first direction and a second portion provided alternately with the first portion in a second direction orthogonal to the first direction. The second portion has a second width in the first direction. The first width is smaller than the second width.

Dependencies are inferred from the claim text.