H10D 62/155
Shapes
Official title: {Shapes (cell layout of DMOS H10D62/127)}
H10D62/155 (Shapes) appears on 398 US grants and 503 published applications in this corpus.
Search patents in H10D- Granted patents
- 398
- Published applications
- 503
- Assignees
- 146
- Inventors
- 773
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 4 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 4 |
| 2002 | 3 | 3 |
| 2003 | 7 | 2 |
| 2004 | 4 | 3 |
| 2005 | 1 | 5 |
| 2006 | 1 | 7 |
| 2007 | 3 | 14 |
| 2008 | 2 | 9 |
| 2009 | 8 | 8 |
| 2010 | 11 | 15 |
| 2011 | 14 | 16 |
| 2012 | 12 | 18 |
| 2013 | 13 | 21 |
| 2014 | 24 | 35 |
| 2015 | 19 | 29 |
| 2016 | 30 | 35 |
| 2017 | 36 | 30 |
| 2018 | 16 | 24 |
| 2019 | 29 | 33 |
| 2020 | 28 | 33 |
| 2021 | 32 | 27 |
| 2022 | 19 | 25 |
| 2023 | 21 | 26 |
| 2024 | 21 | 27 |
| 2025 | 15 | 32 |
| 2026 | 13 | 22 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Structure and field effect transistor15 Sep 2026US 12,740,218 B2Murata Manufacturing Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device25 Aug 2026US 12,720,799 B2Fuji Electric Co., Ltd.
- Semiconductor device9 Jun 2026US 12,652,825 B2Fuji Electric Co., Ltd.
- Semiconductor device and power conversion device9 Jun 2026US 12,652,830 B2Minebea Power Semiconductor Device Inc.
- Power semiconductor device and method for manufacturing a power semiconductor device2 Jun 2026US 12,648,209 B2Hitachi Energy Ltd
- Semiconductor device and method for manufacturing the same17 Sep 2026US 2026/0282485 A1Kabushiki Kaisha Toshiba
- Silicon carbide device with metallic interface layers9 Jul 2026US 2026/0198052 A1Infineon Technologies AG
- Semiconductor device2 Jul 2026US 2026/0190406 A1Samsung Electronics Co., Ltd.
- Semiconductor device25 Jun 2026US 2026/0182012 A1Renesas Electronics Corporation
- Power semiconductor device and method for producing a power semiconductor device30 Apr 2026US 2026/0122960 A1Hitachi Energy Ltd
Most cited
By later US patents
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Method of fabricating semiconductor device164US 6,168,996 AHitachi, Ltd. · 2001
- Trench power MOSFET device140US 4,967,245 ASiliconix Incorporated · 1990
- Method for fabricating a short channel trenched DMOS transistor110US 5,474,943 ASiliconix Incorporated · 1995
- Semiconductor power device manufacture98US 6,251,730 B1U. S. Philips Corporation · 2001