Silicon carbide device with metallic interface layers

A silicon carbide device, comprising:

• a silicon carbide body comprising a first doped region and a second doped region, wherein the first doped region is n doped and the second doped region is p doped;
• a first interface layer in direct contact with the first doped region, wherein the first interface layer comprises a first metal silicide/carbide containing a first transition metal;
• a first buffer layer formed directly on the first interface layer;
• and
• a second interface layer in direct contact with the second doped region, wherein the second interface layer comprises a second metal silicide/carbide containing a second refractory metal, and wherein the second interface layer is formed along at least a lower sidewall portion of a trench that extends from a first surface into the silicon carbide body.