Power semiconductor device and method for producing a power semiconductor device

A power semiconductor device, comprising

• a drift layer of a first conductivity type,
• at least one well region of a second conductivity type being different from the first conductivity type, and
• at least one first doped region of the first conductivity type and at least one second doped region of the second conductivity type, wherein
• the at least one well region, the at least one first doped region and the at least one second doped region are provided at a first side of the power semiconductor device,
• the at least one first doped region and the at least one second doped region are spaced apart from the drift layer by the at least one well region,
• an interface between the at least one first doped region and the at least one second doped region is structured being non uniform in a main extension direction of the at least one well region,
• the at least one second doped region comprises a plurality of parts,
• the plurality of parts comprises first parts and second parts being arranged consecutively alternating along the main extension direction, and
• a maximum doping concentration of the first parts is higher than a maximum doping concentration of the second parts
• the plurality of parts are arranged consecutively along a main extension direction next to one another, and
• each of the plurality of parts have a length perpendicular to the main extension direction
• directly neighbouring first parts and second parts are in direct contact to one another along the main extension direction,
• each first part has a first length perpendicular to the main extension direction and each second part has a second length perpendicular to the main extension direction, and
• the first length is larger than the second length.