Transistor structure having a charge storage layer arranged between a field plate and a drift region
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorJih-Chien Chang
Life of this patent
Estimating the term…
Abstract
A transistor structure including a substrate, a gate structure, a first doped region, a second doped region, a drift region, a field plate, a charge storage layer, and a first dielectric layer is provided. The gate structure is located on the substrate. The first doped region and the second doped region are located in the substrate on two sides of the gate structure. The drift region is located in the substrate between the gate structure and the second doped region. The field plate is located on the substrate above the drift region. The charge storage layer is located between the field plate and the drift region. The first dielectric layer is located between the field plate and the charge storage layer.
Claims19
A transistor structure, comprising:
- a substrate;
- a gate structure located on the substrate;
- a first doped region and a second doped region located in the substrate on two sides of the gate structure;
- a drift region located in the substrate between the gate structure and the second doped region;
- a field plate located on the substrate above the drift region;
- a charge storage layer located between the field plate and the drift region;
- a first dielectric layer located between the field plate and the charge storage layer;
- a first well region located in the substrate;
- and
- a second well region located in the substrate on one side of the first well region, wherein
- the first doped region is located in the first well region,
- the second doped region is located in the second well region, and
- the drift region is located in the first well region and the second well region.
Dependencies are inferred from the claim text.