H10D 1/682
Having dielectrics comprising perovskite structures
Official title: {having dielectrics comprising perovskite structures}
H10D1/682 (Having dielectrics comprising perovskite structures) appears on 3,689 US grants and 3,322 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,689
- Published applications
- 3,322
- Assignees
- 508
- Inventors
- 3,914
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 9 | 0 |
| 1993 | 20 | 0 |
| 1994 | 19 | 0 |
| 1995 | 39 | 0 |
| 1996 | 40 | 0 |
| 1997 | 57 | 0 |
| 1998 | 88 | 0 |
| 1999 | 84 | 0 |
| 2000 | 168 | 0 |
| 2001 | 283 | 139 |
| 2002 | 272 | 345 |
| 2003 | 273 | 329 |
| 2004 | 302 | 299 |
| 2005 | 225 | 257 |
| 2006 | 197 | 231 |
| 2007 | 148 | 190 |
| 2008 | 123 | 144 |
| 2009 | 113 | 107 |
| 2010 | 84 | 89 |
| 2011 | 73 | 49 |
| 2012 | 58 | 66 |
| 2013 | 70 | 66 |
| 2014 | 70 | 54 |
| 2015 | 49 | 51 |
| 2016 | 35 | 27 |
| 2017 | 33 | 38 |
| 2018 | 42 | 47 |
| 2019 | 44 | 53 |
| 2020 | 43 | 71 |
| 2021 | 52 | 94 |
| 2022 | 101 | 121 |
| 2023 | 150 | 181 |
| 2024 | 136 | 129 |
| 2025 | 109 | 94 |
| 2026 | 77 | 51 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Replacement electrode process for 3D ferroelectric memory6 Oct 2026US 12,757,407 B2Intel Corporation
- Dielectric material and device and memory device comprising the same6 Oct 2026US 12,757,417 B2Samsung Electronics Co., Ltd.
- Calabash-shaped MIM capacitor structure and fabricating method of the same6 Oct 2026US 12,757,418 B2United Microelectronics Corp.
- Selective ferroelectric deployment for single-transistor, multiple-capacitor devices8 Sep 2026US 12,731,626 B2Intel Corporation
- Programmable capacitor memory arrays with stacked access transistors8 Sep 2026US 12,733,177 B2Intel Corporation
- Embedded ferroelectric capacitors in the back end of line for ferroelectric random access memory1 Oct 2026US 2026/0305320 A1Intel Corporation
- Semiconductor device including barrier dielectric layer including ferroelectric material17 Sep 2026US 2026/0282385 A1SK hynix Inc.
- Dielectric having high-dielectric constant, method of manufacturing the same, target material for manufacturing the dielectric, electronic device including the dielectric, and electronic apparatus including the electronic device17 Sep 2026US 2026/0282404 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for driving semiconductor device10 Sep 2026US 2026/0268955 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor Device And Method For Manufacturing The Semiconductor Device3 Sep 2026US 2026/0262210 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same626US 6,297,539 B1Sharp Laboratories of America, Inc. · 2001
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Methods and apparatus for material deposition577US 5,119,760 ASymetrix Corporation · 1992
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004