H10D 1/68
Capacitors having no potential barriers
H10D1/68 (Capacitors having no potential barriers) appears on 14,674 US grants and 14,780 published applications in this corpus.
Search patents in H10D- Granted patents
- 14,674
- Published applications
- 14,780
- Assignees
- 1,475
- Inventors
- 16,920
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 6 | 0 |
| 1985 | 3 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 13 | 0 |
| 1989 | 10 | 0 |
| 1990 | 15 | 0 |
| 1991 | 32 | 0 |
| 1992 | 63 | 0 |
| 1993 | 95 | 0 |
| 1994 | 84 | 0 |
| 1995 | 108 | 0 |
| 1996 | 139 | 0 |
| 1997 | 178 | 0 |
| 1998 | 268 | 0 |
| 1999 | 331 | 0 |
| 2000 | 566 | 0 |
| 2001 | 776 | 313 |
| 2002 | 679 | 739 |
| 2003 | 670 | 722 |
| 2004 | 657 | 693 |
| 2005 | 508 | 682 |
| 2006 | 499 | 689 |
| 2007 | 424 | 585 |
| 2008 | 355 | 500 |
| 2009 | 363 | 444 |
| 2010 | 430 | 470 |
| 2011 | 345 | 398 |
| 2012 | 335 | 456 |
| 2013 | 436 | 497 |
| 2014 | 510 | 472 |
| 2015 | 472 | 490 |
| 2016 | 476 | 399 |
| 2017 | 426 | 411 |
| 2018 | 373 | 454 |
| 2019 | 462 | 473 |
| 2020 | 454 | 615 |
| 2021 | 466 | 607 |
| 2022 | 503 | 712 |
| 2023 | 572 | 870 |
| 2024 | 588 | 752 |
| 2025 | 595 | 741 |
| 2026 | 372 | 596 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Replacement electrode process for 3D ferroelectric memory6 Oct 2026US 12,757,407 B2Intel Corporation
- Dielectric material and device and memory device comprising the same6 Oct 2026US 12,757,417 B2Samsung Electronics Co., Ltd.
- Calabash-shaped MIM capacitor structure and fabricating method of the same6 Oct 2026US 12,757,418 B2United Microelectronics Corp.
- Field effect transistor, capacitor, and electronic apparatus including domain-controlled ferroelectric material6 Oct 2026US 12,757,449 B2Samsung Electronics Co., Ltd.
- Capacitor structure and semiconductor device including the same8 Oct 2026US 2026/0313876 A1Samsung Electronics Co., Ltd.
- Integrated chips package structure with capacitor8 Oct 2026US 2026/0313919 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Capacitor, method of manufacturing capacitor, and method of manufacturing memory device8 Oct 2026US 2026/0313923 A1EGTM Co., Ltd.
- Concentric dtc bumps for high density package decap solution8 Oct 2026US 2026/0313924 A1QUALCOMM Incorporated
- A Multi-Layer Deep-Trench Capacitor8 Oct 2026US 2026/0313925 A1Lotus Microsystems Aps
Most cited
By later US patents
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Package with metal-insulator-metal capacitor and method of manufacturing the same1,021US 9,263,511 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007