H10D 1/00
Resistors, capacitors or inductors
H10D1/00 (Resistors, capacitors or inductors) appears on 21,384 US grants and 21,515 published applications in this corpus.
Search patents in H10D- Granted patents
- 21,384
- Published applications
- 21,515
- Assignees
- 2,102
- Inventors
- 24,869
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 12 | 0 |
| 1977 | 18 | 0 |
| 1978 | 13 | 0 |
| 1979 | 11 | 0 |
| 1980 | 32 | 0 |
| 1981 | 31 | 0 |
| 1982 | 17 | 0 |
| 1983 | 27 | 0 |
| 1984 | 34 | 0 |
| 1985 | 31 | 0 |
| 1986 | 30 | 0 |
| 1987 | 40 | 0 |
| 1988 | 44 | 0 |
| 1989 | 53 | 0 |
| 1990 | 59 | 0 |
| 1991 | 92 | 0 |
| 1992 | 100 | 0 |
| 1993 | 151 | 0 |
| 1994 | 125 | 0 |
| 1995 | 142 | 0 |
| 1996 | 188 | 0 |
| 1997 | 209 | 0 |
| 1998 | 333 | 0 |
| 1999 | 406 | 0 |
| 2000 | 671 | 0 |
| 2001 | 912 | 373 |
| 2002 | 828 | 881 |
| 2003 | 821 | 890 |
| 2004 | 832 | 901 |
| 2005 | 659 | 930 |
| 2006 | 673 | 904 |
| 2007 | 548 | 837 |
| 2008 | 523 | 720 |
| 2009 | 475 | 613 |
| 2010 | 600 | 641 |
| 2011 | 504 | 565 |
| 2012 | 462 | 648 |
| 2013 | 648 | 753 |
| 2014 | 755 | 774 |
| 2015 | 741 | 780 |
| 2016 | 775 | 715 |
| 2017 | 877 | 1006 |
| 2018 | 844 | 849 |
| 2019 | 875 | 831 |
| 2020 | 809 | 957 |
| 2021 | 711 | 880 |
| 2022 | 726 | 966 |
| 2023 | 780 | 1169 |
| 2024 | 807 | 1034 |
| 2025 | 800 | 1059 |
| 2026 | 530 | 839 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Inductance element and inductance element fabrication method6 Oct 2026US 12,755,886 B2Lapis Semiconductor Co., Ltd.
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Replacement electrode process for 3D ferroelectric memory6 Oct 2026US 12,757,407 B2Intel Corporation
- Semiconductor device and method for fabricating the same6 Oct 2026US 12,757,415 B2United Microelectronics Corp.
- Metal-oxide-semiconductor capacitor structure6 Oct 2026US 12,757,416 B2United Microelectronics Corp.
- Semiconductor devices and methods of fabricating the same8 Oct 2026US 2026/0313865 A1Samsung Electronics Co., Ltd.
- Capacitor structure and semiconductor device including the same8 Oct 2026US 2026/0313876 A1Samsung Electronics Co., Ltd.
- Integrated chips package structure with capacitor8 Oct 2026US 2026/0313919 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing capacitor and method of manufacturing memory device8 Oct 2026US 2026/0313920 A1EGTM Co., Ltd.
- Semiconductor device structure and method for forming the same8 Oct 2026US 2026/0313921 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Package with metal-insulator-metal capacitor and method of manufacturing the same1,021US 9,263,511 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007