Package with metal-insulator-metal capacitor and method of manufacturing the same

A package comprising:

• a chip in a molding compound, wherein the chip comprises a contact pad on a substrate, a passivation layer on the substrate, wherein a portion of the contact pad is exposed by the passivation layer, a first polymer layer on the passivation layer, a metal-insulator-metal (MIM) capacitor in the first polymer layer, a first metallic pillar in the first polymer layer and connected to the contact pad, and a second metallic pillar in the first polymer layer and connected to the MIM capacitor;
• a first interconnect structure over the first polymer layer and electrically connected to the first metallic pillar;
• a second interconnect structure over the first polymer layer and electrically connected to the second metallic pillar;
• a second polymer layer between the first polymer layer and the second interconnect structure;
• and
• a bump formed over and electrically coupled to the second interconnect structure.

A package comprising:

• a metal-insulator-metal (MIM) capacitor in a first polymer layer;
• a first metallic pillar in the first polymer layer and connected to a first portion of the MIM capacitor;
• a second metallic pillar in the first polymer layer and connected to a second portion of the MIM capacitor, wherein a height of the second metallic pillar is different from a height of the first metallic pillar;
• a first interconnect structure electrically connected to the first metallic pillar;
• a second interconnect structure electrically connected to the second metallic pillar;
• and
• a bump electrically coupled to the second interconnect structure.