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US 12,757,417 B2Granted
Dielectric material and device and memory device comprising the same
AssigneeSamsung Electronics Co., Ltd.
InventorsGiyoung Jo, Hyeoncheol Park, Daejin Yang, Dohwon Jung, Taewon Jeong
Life of this patent
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Abstract
The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: <Formula 1> (100-x-y)BaTiO3.xBiREO3.yABO3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0<x<50, 0<y<50, and 0<x+y<50 are satisfied.
Claims21
A dielectric material having a composition represented by Formula 1:
- (100-x-y)BaTiO3.xBiREO3.yABO3 <Formula 1>
- wherein, in Formula 1,
- RE is at least one of thulium (Tm) or lutetium (Lu),
- A is an alkali metal,
- B is a pentavalent transition metal, and
- 0<x≤20, 0<y≤10, and 0<x+y≤30,
- wherein the dielectric material is a solid solution.
4 more elements
Dependencies are inferred from the claim text.