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US 12,757,418 B2Granted
Calabash-shaped MIM capacitor structure and fabricating method of the same
AssigneeUnited Microelectronics Corp.
InventorsYao-Hsien Chung, Fu-Yu Tsai, Bin-Siang Tsai
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Abstract
A calabash-shaped MIM capacitor structure includes a stacked layer. The stacked layer includes numerous dielectric layers. An MIM capacitor is disposed within the stacked layer. The MIM capacitor includes a calabash-shaped profile. The calabash-shaped profile includes a rounded bottom, a narrow body and a rounded shoulder disposed from bottom to top.
Claims10
A calabash-shaped metal-insulator-metal (MIM) capacitor structure, comprising:
- a stacked layer, wherein the stacked layer comprises a plurality of dielectric layers, and the plurality of dielectric layers comprises a first nitrogen-containing silicon layer, a first oxygen-containing silicon layer, a second nitrogen-containing silicon layer and a second oxygen-containing silicon layer disposed in sequence from bottom to top;
- and
- an MIM capacitor disposed within the stacked layer, wherein the MIM capacitor comprises a calabash-shaped the profile, and calabash-shaped profile comprises a rounded bottom, a narrow body and a rounded shoulder disposed from bottom to top in sequence, wherein the rounded bottom is embedded in the first oxygen-containing silicon layer, the narrow body is embedded in the second nitrogen-containing silicon layer, and the rounded shoulder is embedded in the second oxygen-containing silicon layer.
Dependencies are inferred from the claim text.